Datasheet > BSR33

BSR33

更新时间： 2024-09-18 14:53:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1600K
描述
SOT-89-3L

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中文翻译

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技术参数
数据手册

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BSR33 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

BSR33 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

BSR33

TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

Low Voltage

High Current

Complement to BSR43

3. EMITTER

AAPLICATIONS

Medium Power Transistor

MARKING:BR4

Solid dot = Green molding compound device.

BR4

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-90

-80

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Vo ltage

Collector Current

-1

P_C

Collector Power Dissipation

500

250

℃/W

℃

R_{θ JA}

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100µA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100µA,I_C=0

-90

-80

-5

I_CBO

I_EBO

V_CB=-60V,I_E=0

-100

Emitter cut-off current

V_EB=-5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=-5V, I_C=0.1mA

V_CE=-5V, I_C=-100mA

V_CE=-5V, I_C=-500mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

VCE=-10V,IC=-50mA, f=100MHz

100

DC current gain

300

-0.25

-0.5

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

f_T

-1.2

100

MHz

Transition frequency

*Pulse test

www.jscj-elec.com

Rev. - 2.2

12 3 4

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