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BSR33TC

更新时间: 2024-10-01 13:05:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管开关局域网
页数 文件大小 规格书
1页 17K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

BSR33TC 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.17
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
基于收集器的最大容量:20 pF集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
最大关闭时间(toff):650 ns最大开启时间(吨):500 ns
VCEsat-Max:0.5 VBase Number Matches:1

BSR33TC 数据手册

  
SOT89 PNP SILICON PLANAR  
BSR31  
BSR33  
MEDIUM POWER TRANSISTORS  
ISSUE 3 – FEBRUARY 1996  
COMPLEMENTARY TYPE –  
PARTMARKING DETAILS –  
BSR31 – BSR41  
BSR33 – BSR43  
C
BSR31 – BR2  
BSR33 – BR4  
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
BSR31  
-70  
BSR33  
-90  
UNIT  
V
Collector-Base Voltage  
Collector-Em itter Voltage  
-60  
-80  
V
Em itter-Base Voltage  
-5  
-2  
-1  
1
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tam b =25°C  
Operating and Storage Tem perature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
A
PTOT  
Tj:Tstg  
W
°C  
-65 to +150  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage BSR33  
BSR31 V(BR)CBO  
-70  
-90  
V
V
IC=-100µA  
IC=-100µA  
Collector-Em itter  
Breakdown Voltage BSR33  
BSR31 V(BR)CEO  
-60  
-80  
V
IC=-10m A  
IC=-10m A  
Em itter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
-5  
V
IE=-10m A  
Collector Cut-Off Current  
-100  
-50  
nA  
µA  
VCB=-60V  
V
CB=-60V, Tam b=125°C  
IC =-150m A, IB=-15m A*  
C =-500m A, IB=-50m A*  
IC=-150m A, IB=-15m A*  
C =-500m A, IB=-50m A*  
C =-100µA, VCE =-5V*  
C =-100m A, VCE =-5V*  
C =-500m A, VCE =-5V*  
Collector-Em itter Saturation VCE(sat)  
Voltage  
-0.25  
-0.5  
V
V
I
Base-Em itter  
VBE(sat)  
-1.0  
-1.2  
V
V
Saturation Voltage  
I
Static Forward Current  
Transfer Ratio  
hFE  
30  
100  
50  
I
I
I
300  
Collector Capacitance  
Em itter Capacitance  
Transition Frequency  
Cc  
Ce  
fT  
20  
pF  
VCB =-10V, f =1MHz  
VEB =-0.5V, f =1MHz  
120  
pF  
100  
MHz  
IC=-50m A, VCE=-10V  
f =35MHz  
Turn-On Tim e  
Turn-Off Tim e  
Ton  
Toff  
500  
650  
ns  
ns  
VCC =-20V, IC =-100m A  
IB1 =-IB2 =-5m A  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice param eter data is available upon request for this device  
3 - 66  

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