生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 300 ns |
最大开启时间(吨): | 70 ns | VCEsat-Max: | 0.4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSR18B | FAIRCHILD |
获取价格 |
PNP General Purpose Amplifier | |
BSR18TRL | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon | |
BSR18TRL13 | NXP |
获取价格 |
TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BSR18TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon | |
BSR19 | NXP |
获取价格 |
NPN high-voltage transistors | |
BSR19 | KEXIN |
获取价格 |
NPN High-Voltage Transistors | |
BSR19 | TYSEMI |
获取价格 |
Low current (max. 300 mA) High voltage (max. 160 V). Base current IB 100 mA | |
BSR19/A | ETC |
获取价格 |
NPN High-VoltageTransistor | |
BSR19/T3 | NXP |
获取价格 |
TRANSISTOR 300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
BSR19A | NXP |
获取价格 |
NPN high-voltage transistors |