Datasheet > BSR19A-Q

BSR19A-Q

更新时间： 2024-09-29 11:12:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	186K
描述
NPN high voltage transistorProduction

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中文翻译

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BSR19A-Q 数据手册

BSR19A-Q

NPN high voltage transistors

25 October 2021

Product data sheet

1. General description

NPN high-voltage transistor in a small SOT23 plastic package.

PNP complements: BSR20A-Q.

2. Features and benefits

•

Low current (max. 300 mA)

High voltage (max. 160 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification

Especially used for telephony applications.

4. Quick reference data

Table 1. Quick reference data

Symbol

V_CBO

Parameter

Conditions

Min

Typ

Max

180

160

Unit

collector-base voltage open emitter

V_CEO

collector-emitter

voltage

open base

I_CM

P_tot

h_FE

f_T

peak collector current single pulse; t_p≤ 1 ms

total power dissipation T_amb≤ 25 °C

600

250

DC current gain

V_CE= 5 V; I_C= 1 mA; T_amb= 25 °C

100

transition frequency

V_CE= 10 V; I_C= 10 mA; f = 100 MHz;

T_amb= 25 °C

300

MHz

12 3 4 5 6 7...9

中文翻译

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