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BSR19T/R PDF预览

BSR19T/R

更新时间: 2024-11-02 19:51:35
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
8页 131K
描述
TRANSISTOR 300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

BSR19T/R 技术参数

生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.23
最大集电极电流 (IC):0.3 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.25 V
Base Number Matches:1

BSR19T/R 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BSR19; BSR19A  
NPN high voltage transistors  
Product data sheet  
2004 Mar 15  
Supersedes data of 2004 Jan 13  

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