BSC190N12NS3GXT

更新时间： 2024-11-24 13:05:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	435K
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BSC190N12NS3GXT 数据手册

BSC190N12NS3 G

OptiMOS^TM3 Power-Transistor

Product Summary

V _DS

120

Features

R _DS(on),max

I _D

mΩ

• N-channel, normal level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

PG-TDSON-8

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC190N12NS3 G

PG-TDSON-8

190N12NS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

T _A=25 °C,

8.6

_thJA=45 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

176

I _D=39 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

¹⁾J-STD20 and JESD22

Rev. 2.5

page 1

2009-10-30

12 3 4 5 6 7...10

中文翻译

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