Datasheet > BSC265N10LSFG

BSC265N10LSFG

更新时间： 2024-11-20 06:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	428K
描述
OptiMOS™2 Power-Transistor

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中文翻译

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数据手册
替代型号

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BSC265N10LSFG 数据手册

BSC265N10LSF G

OptiMOS™2 Power-Transistor

Product Summary

Features

V _DS

100

26.5

• N-channel, logic level

R _DS(on),max

I _D

mΩ

• Very low gate charge x R _DS(on)product (FOM)

• Ideal for high-frequency switching and synchronous rectification

PG-TDSON-8

• Low on-resistance R _DS(on)

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• 150 °C operating temperature

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC265N10LSF G

PG-TDSON-8

265N10LS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

T _A=25 °C,

6.5

_thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

160

I _D=40 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

Rev. 2.08

page 1

2009-11-04

12 3 4 5 6 7...10

中文翻译

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BSC265N10LSFG 替代型号

型号	品牌	替代类型	描述	数据表
BSC123N10LSG	INFINEON	类似代替	OptiMOS™2 Power-Transistor
BSC205N10LSG	INFINEON	功能相似	OptiMOS™2 Power-Transistor

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