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BS850 PDF预览

BS850

更新时间: 2024-01-12 21:38:39
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管输入元件
页数 文件大小 规格书
3页 73K
描述
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

BS850 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):0.25 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
工作模式:ENHANCEMENT MODE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.31 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

BS850 数据手册

 浏览型号BS850的Datasheet PDF文件第2页浏览型号BS850的Datasheet PDF文件第3页 
BS850  
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR  
DISCONTINUED,  
DESIGN  
NEW  
BSS84  
USE  
Features  
FOR  
·
·
·
·
High Input Impedance  
Fast Switching Speed  
CMOS Logic Compatible Input  
No Thermal Runaway or Secondary  
Breakdown  
SOT-23  
Min  
Dim  
A
Max  
0.51  
1.40  
2.50  
1.05  
0.61  
2.05  
3.05  
0.15  
1.10  
0.61  
0.178  
A
0.37  
1.19  
2.10  
0.89  
0.45  
1.78  
2.65  
0.013  
0.89  
0.45  
0.076  
D
B
TOP VIEW  
B
C
C
·
Surface Mount Package Ideally Suited  
for Automatic Assembly  
D
G
S
E
D
G
E
G
H
Mechanical Data  
H
·
·
Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-202  
J
M
K
K
Method 208  
J
L
·
·
·
Pin Connection: See Diagram  
Marking: S50  
Weight: 0.008 grams (approx.)  
L
M
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
–VDSS  
–VDGS  
VGS  
Value  
Unit  
V
Drain-Source Voltage  
Drain-Gate Voltage  
60  
60  
V
Gate-Source Voltage (pulsed)  
20  
V
–ID  
Drain Current (continuous)  
250  
310  
mA  
mW  
°C  
Power Dissipation @TC = 25°C (Note 1)  
Operating and Storage Temperature Range  
Pd  
Tj, TSTG  
-65 to+150  
@ TA = 25°C unless otherwise specified  
Characteristic  
Inverse Diode  
Symbol  
Value  
0.30  
Unit  
A
IF  
Maximum Forward Current (continuous)  
Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.12A, Tj = 25°C  
VF  
0.85  
V
2
Notes:  
1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm area.  
DS11402 Rev. F-3  
1 of 3  
BS850  

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