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BS870/E7 PDF预览

BS870/E7

更新时间: 2024-02-07 10:37:27
品牌 Logo 应用领域
威世 - VISHAY 输入元件开关光电二极管晶体管
页数 文件大小 规格书
5页 259K
描述
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN

BS870/E7 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7其他特性:HIGH INPUT IMPEDENCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.25 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BS870/E7 数据手册

 浏览型号BS870/E7的Datasheet PDF文件第2页浏览型号BS870/E7的Datasheet PDF文件第3页浏览型号BS870/E7的Datasheet PDF文件第4页浏览型号BS870/E7的Datasheet PDF文件第5页 
BS870  
DMOS Transistors (N-Channel)  
TO-263AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
.016 (0.4)  
Top View  
Mounting Pad Layout  
3
Pin Configuration  
1. Gate  
2. Source  
3. Drain  
0.037 (0.95)  
0.037 (0.95)  
1
2
0.079 (2.0)  
.037(0.95)  
.037(0.95)  
0.035 (0.9)  
0.031 (0.8)  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Dimensionsininchesand (millimeters)
Features  
Mechanical Data  
• High input impedance  
Case: SOT-23 Plastic Package  
• High-speed switching  
Weight: approx. 0.008g  
• No minority carrier storage time  
• CMOS logic compatible input  
• No thermal runaway  
Packaging Codes/Options:  
E6/Bulk- 5K per container, 20K/box  
E7/4K per Ammo tape, 20K/box  
• No secondary breakdown  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VDSS  
VDGS  
VGS  
Limit  
Unit  
V
Drain-Source Voltage  
Drain-Gate Voltage  
60  
60  
V
±
Gate-Source-Voltage (pulsed)  
Drain Current (continuous)  
Power Dissipation at TSB = 50°C  
20  
V
ID  
250  
mA  
W
Ptot  
0.3101)  
Thermal Resistance Junction to Substrate  
Backside  
RthSB  
3201)  
°C/W  
Thermal Resistance Junction to Ambiant Air  
Junction Temperature  
RthJA  
Tj  
4501)  
150  
°C/W  
°C  
Storage Temperature Range  
TS  
-65 to +150  
°C  
Note:  
(1) Ceramic Substrate 0.7 mm; 2.5 cm2 area.  
5/5/00  

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