是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.25 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.31 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BS870_ | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
获取价格 |
|
BS870_08 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
获取价格 |
|
BS870-13 | DIODES | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Meta |
获取价格 |
|
BS870-7 | DIODES | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Meta |
获取价格 |
|
BS870-7-F | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
获取价格 |
|
BS870Q | DIODES | N-CHANNEL ENHANCEMENT MODE MOSFET |
获取价格 |