Datasheet > BS850/E8

BS850/E8

更新时间： 2024-02-28 08:57:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	226K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 250MA I(D) \| TO-236AB

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技术参数
数据手册

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BS850/E8 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	0.25 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.31 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

BS850/E8 数据手册

BS850

Vishay Semiconductors

formerly General Semiconductor

DMOS Transistor (P-Channel)

TO-236AB (SOT-23)

0.031 (0.8)

0.035 (0.9)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

0.079 (2.0)

Pin Configuration

1. Gate

2. Source

3. Drain

0.037 (0.95)

.037(0.95)

Mounting Pad Layout

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Features

Mechanical Data

• High input impedance

Case: SOT-23 Plastic Package

• High-speed switching

Weight: approx. 0.008 grams

• No minority carrier storage time

• CMOS logic compatible input

• No thermal runaway

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• No secondary breakdown

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

–V_DSS

–V_DGS

V_GS

Limit

Unit

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Power Dissipation at T_SB= 50°C

–I_D

250

P_tot

0.310⁽¹⁾

Thermal Resistance Junction to Substrate

Backside

R_θSB

320⁽¹⁾

°C/W

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_θJA

T_j

450⁽¹⁾

150

°C/W

°C

Storage Temperature Range

T_S

–65 to +150

°C

Note:

(1) Device on Fiberglass Substrate, see layout on second page

Document Number 88181

10-May-02

www.vishay.com

12 3 4 5

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