Datasheet > BS870

BS870

更新时间： 2024-11-25 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	277K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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BS870 数据手册

SMD Type

MOSFET

N-Channel Enhancement MOSFET

BS870

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

Features

+0.1

-0.1

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

D rain

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

Low Input/Output Leakage

ESD Protected 2KV HBM

Gate

1.Base

1 GATE

2.Emitter

2 SOURCE

Gate

Protection

Diode

Source

3 DRAIN

Absolute Maximum Ratings Ta=25

Parameter

Symbol

V^DS

Rating

Unit

Drain-Source Voltage

±20

Gate-Source Voltage -Continuous

V^GS

Drain Current

-Continuous ( Note:1)

-Pulsed

300

I^D

800

Power Dissipation

(Note 1)

P^D

R^thJA

T^J

350

Thermal Resistance.Junction- to-Ambient

Junction Temperature

357

150

Junction and Storage Temperature Range

T^stg

-55 to 150

Device mounted on FR-4 PCB.

Notes: 1.

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

1.6

Max

Unit

Drain-Source Breakdown Voltage (Note.2)

Zero Gate Voltage Drain Current (Note.2)

DSS

GSS

GS(th)

=100 A, VGS=0V

DS=60V, VGS=0V

DS=0V, VGS=±20V

±10

2.5

Gate-Body Leakage Current

Gate Threshold Voltage

(Note.2)

VDS = 10V, ID = 1mA

GS=10V, I

=500mA

Static Drain-Source On-Resistance (Note.2)

RDS(On)

=50mA

Forward Transfer Admittance

Input Capacitance

(Note.2)

| Yfs |

iss

=200mA

GS=0V, VDS=25V, f=1MHz

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Total Gate Charge

GS=4.5V, VDS=15V, I

=200mA, VDS=30V,

=200mA

0.8

Turn-On DelayTime

d(on)

d(off)

G=10 ,VGEN=10V,RL=150

Turn-Off DelayTime

Note: 2.

Short duration test pulse used to minimize self-heating effect.

Marking

K72

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