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BS170RL1 PDF预览

BS170RL1

更新时间: 2024-11-05 21:53:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关
页数 文件大小 规格书
4页 56K
描述
Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

BS170RL1 数据手册

 浏览型号BS170RL1的Datasheet PDF文件第2页浏览型号BS170RL1的Datasheet PDF文件第3页浏览型号BS170RL1的Datasheet PDF文件第4页 
BS170  
Preferred Device  
Small Signal MOSFET  
500 mA, 60 V  
N−Channel TO−92 (TO−226)  
Features  
http://onsemi.com  
Pb−Free Package is Available*  
500 mA, 60 V  
RDS(on) = 5 W  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
Symbol  
Value  
Unit  
V
DS  
60  
Vdc  
N−Channel  
Gate−Source Voltage  
− Continuous  
D
V
V
GSM  
±20  
±40  
Vdc  
Vpk  
GS  
− Non−repetitive (t 50 ms)  
p
Drain Current (Note)  
I
0.5  
Adc  
mW  
°C  
D
G
Total Device Dissipation @ T = 25°C  
P
350  
A
D
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
J
stg  
S
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
TO−92 (TO−226)  
CASE 29  
STYLE 30  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BS170  
YWW  
1
3
Drain  
Source  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 4  
BS170/D  

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