Datasheet > BS170-S00Z

BS170-S00Z

更新时间： 2024-09-16 20:40:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
13页	652K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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BS170-S00Z 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	0.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.83 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

BS170-S00Z 数据手册

April 1995

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

High density cell design for low R_DS(ON).

These

N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

_______________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise noted

BS170

MMBF170

Units

Drain-Source Voltage

V_DSS

V_DGR

Drain-Gate Voltage (R_GS< 1MW)

Gate-Source Voltage

± 20

V_GSS

I_D

Drain Current - Continuous

- Pulsed

500

1200

830

6.6

500

800

300

2.4

P_D

Maximum Power Dissipation

Derate Above 25°C

mW/°C

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

300

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

°C

THERMAL CHARACTERISTICS

Thermal Resistacne, Junction-to-Ambient

150

417

°C/W

R_q_JA

BS170 Rev. C / MMBF170 Rev. D

12 3 4 5 6 7...13

中文翻译

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与BS170-S00Z相关器件

型号	品牌	获取价格	描述	数据表
BS170T/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 500MA I(D) \| TO-92
BS170TA	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
BS170-TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170TR1	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
BS170-TR1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170TR2	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
BS170TR3	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
BS170TR4	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
BS170ZL1	ONSEMI	获取价格	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET
BS170ZL1	MOTOROLA	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

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