BS170ZL1G

更新时间： 2024-12-01 06:44:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关
页数	文件大小	规格书
4页	58K
描述
Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226)

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BS170ZL1G 数据手册

BS170

Preferred Device

Small Signal MOSFET

500 mA, 60 Volts

N−Channel TO−92 (TO−226)

Features

http://onsemi.com

• Pb−Free Package is Available*

500 mA, 60 Volts

R_DS(on)= 5.0 W

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

N−Channel

Gate−Source Voltage

− Continuous

GSM

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

Drain Current (Note)

0.5

Adc

°C

Total Device Dissipation @ T = 25°C

350

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

TO−92 (TO−226)

CASE 29

NOTE: The Power Dissipation of the package may result in a lower continuous

drain current.

STYLE 30

MARKING DIAGRAM

& PIN ASSIGNMENT

BS170

AYWWG

Drain Gate Source

BS170 = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

August, 2005 − Rev. 5

BS170/D

12 3 4

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