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BS170RLRAG PDF预览

BS170RLRAG

更新时间: 2024-11-06 06:44:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 58K
描述
Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226)

BS170RLRAG 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.5 A最大漏极电流 (ID):0.5 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BS170RLRAG 数据手册

 浏览型号BS170RLRAG的Datasheet PDF文件第2页浏览型号BS170RLRAG的Datasheet PDF文件第3页浏览型号BS170RLRAG的Datasheet PDF文件第4页 
BS170  
Preferred Device  
Small Signal MOSFET  
500 mA, 60 Volts  
N−Channel TO−92 (TO−226)  
Features  
http://onsemi.com  
Pb−Free Package is Available*  
500 mA, 60 Volts  
RDS(on) = 5.0 W  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
Symbol  
Value  
Unit  
V
DS  
60  
Vdc  
N−Channel  
Gate−Source Voltage  
− Continuous  
D
V
V
GSM  
20  
40  
Vdc  
Vpk  
GS  
− Non−repetitive (t 50 ms)  
p
Drain Current (Note)  
I
0.5  
Adc  
mW  
°C  
D
G
Total Device Dissipation @ T = 25°C  
P
350  
A
D
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
J
stg  
S
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO−92 (TO−226)  
CASE 29  
NOTE: The Power Dissipation of the package may result in a lower continuous  
drain current.  
STYLE 30  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BS170  
AYWWG  
G
1
2
3
Drain Gate Source  
BS170 = Device Code  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 5  
BS170/D  

BS170RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
2N7002LT1G ONSEMI

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Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
BS170G ONSEMI

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Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET
BS170 ONSEMI

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Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 500MA I(D) | TO-92