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BR93H46RFVT-2CE2 PDF预览

BR93H46RFVT-2CE2

更新时间: 2024-09-20 12:42:35
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
32页 719K
描述
Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM

BR93H46RFVT-2CE2 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:TSSOP-8Reach Compliance Code:compliant
Factory Lead Time:16 weeks风险等级:1.73
Is Samacsys:N最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:4.4 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:64 words
字数代码:64工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:64X16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
串行总线类型:MICROWIRE最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):4 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mm最长写入周期时间 (tWC):4 ms
写保护:SOFTWAREBase Number Matches:1

BR93H46RFVT-2CE2 数据手册

 浏览型号BR93H46RFVT-2CE2的Datasheet PDF文件第2页浏览型号BR93H46RFVT-2CE2的Datasheet PDF文件第3页浏览型号BR93H46RFVT-2CE2的Datasheet PDF文件第4页浏览型号BR93H46RFVT-2CE2的Datasheet PDF文件第5页浏览型号BR93H46RFVT-2CE2的Datasheet PDF文件第6页浏览型号BR93H46RFVT-2CE2的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation Microwire BUS EEPROM (3-wire)  
BR93H46-2C  
General Description  
Package  
MSOP8  
TSSOP-B8  
SOP8  
(Typ)  
(Typ)  
(Max)  
BR93H46-2C is a serial EEPROM of serial 3-line  
interface method  
2.90mm x 4.00mm x 0.90mm  
3.00mm x 6.40mm x 1.20mm  
5.00mm x 6.20mm x 1.71mm  
4.90mm x 6.00mm x 1.65mm  
SOP-J8  
Features  
„
„
Conforming to Microwire BUS  
Withstands Electrostatic Voltage up to 6kV  
(HBM method typ)  
„
„
„
„
Wide Temperature Range -40to +125℃  
Same package line-up and same pin configuration  
2.5V to 5.5V Single Supply Voltage Operation  
Address Auto Increment Function at READ  
Operation  
„
Prevention of write mistake  
¾ Write prohibition at power on  
¾ Write prohibition by command code  
¾ Write mistake prevention circuit at low voltage  
Self-timed programming cycle  
Program Condition Display by READY / BUSY  
Low Supply Current  
TSSOP-B8  
MSOP8  
„
„
„
¾ Write Operation (5V) : 0.8mA (Typ)  
¾ Read Operation (5V) : 0.5mA (Typ)  
¾ Standby Operation (5V) : 0.1μA (Typ)  
Compact package MSOP8 / TSSOP-B8 / SOP8 /  
SOP-J8  
High-Reliability using ROHM Original  
Double-Cell structure  
More than 100 years data retention (Ta125)  
„
„
„
„
„
„
More than 1 million write cycles (Ta125)  
Data set to FFFFh on all addresses at shipment  
AEC-Q100 Qualified  
SOP-J8  
SOP8  
BR93H46-2C  
MSOP8  
RFVM  
TSSOP-B8  
SOP8  
SOP-J8  
RFJ  
Package Type  
Product Name  
BR93H46-2C  
Capacity  
1Kbit  
Bit Format  
Supply Voltage  
2.5V to 5.5V  
RFVT  
RF  
64×16  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R1R0G100010-1-2  
19.DEC.2012 Rev.002  
1/29  

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