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BQ4013_07 PDF预览

BQ4013_07

更新时间: 2024-01-29 10:44:37
品牌 Logo 应用领域
德州仪器 - TI 静态存储器
页数 文件大小 规格书
15页 165K
描述
128 k X 8 NONVOLATILE SRAM (5 V, 3.3 V)

BQ4013_07 数据手册

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bq4013/Y/LY  
www.ti.com  
SLUS121AMAY 1999REVISED MAY 2007  
128 k × 8 NONVOLATILE SRAM (5 V, 3.3 V)  
FEATURES  
GENERAL DESCRIPTION  
Data Retention for at least 10 Years Without  
Power  
The CMOS bq4013/Y/LY is  
a
nonvolatile  
1,048,576-bit static RAM organized as 131,072  
words by 8 bits. The integral control circuitry and  
lithium energy source provide reliable nonvolatility  
coupled with the unlimited write cycles of standard  
SRAM.  
Automatic Write-Protection During  
Power-up/Power-down Cycles  
Conventional SRAM Operation, Including  
Unlimited Write Cycles  
The control circuitry constantly monitors the single  
supply for an out-of-tolerance condition. When VCC  
falls out of tolerance, the SRAM is unconditionally  
write-protected to prevent an inadvertent write  
operation.  
Internal Isolation of Battery before Power  
Application  
5-V or 3.3-V Operation  
Industry Standard 32-Pin DIP Pinout  
At this time the integral energy source is switched on  
to sustain the memory until after VCC returns valid.  
The bq4013/Y/LY uses extremely low standby  
current CMOS SRAMs, coupled with small lithium  
coin cells to provide nonvolatility without long  
write-cycle times and the write-cycle limitations  
associated with EEPROM.  
The bq4013/Y/LY requires no external circuitry and is  
compatible with the industry-standard 1-Mb SRAM  
pinout.  
PIN CONNECTIONS  
32−Pin DIP Module  
(TOP VIEW)  
NC  
1
2
3
4
5
6
7
8
9
32  
31  
30  
29  
28  
27  
26  
25  
24  
V
A
NC  
CC  
A
16  
15  
A
14  
A
12  
WE  
A
7
A
13  
A
6
A
8
A
5
A
9
A
4
A
11  
A
3
OE  
A
10  
11  
12  
13  
14  
15  
16  
23  
22  
21  
20  
19  
18  
17  
A
2
10  
A
1
CE  
DQ  
A
0
7
DQ  
DQ  
DQ  
DQ  
DQ  
0
6
5
4
3
DQ  
1
DQ  
2
V
SS  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1999–2007, Texas Instruments Incorporated  

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