bq4014/bq4014Y
256Kx8 Nonvolatile SRAM
source is switched on to sustain the
Features
➤ Data retention in the absence of
General Description
m em or y u n t il a ft er VCC r et ur ns
valid.
The CMOS bq4014 is a nonvolatile
2,097,152-bit static RAM organized as
262,144 words by 8 bits. The integral
control circuitry and lithium energy
source provide reliable nonvolatility
coupled with the un limited wr ite
cycles of standard SRAM.
power
Th e bq4014 u ses ext r em ely low
s t a n dby cu r r en t CMOS SRAMs,
cou pled wit h sm a ll lit h iu m coin
cells to provide nonvolatility without
long write-cycle times and the write-
cycle lim it a tion s a ssocia ted with
EEPROM.
➤ Automatic write-protection
during power-up/power-down
cycles
➤ Industry-standard 32-pin 256K x
8 pinout
Th e con tr ol cir cu it r y con s ta n t ly
monitors the single 5V supply for an
out-of-toler an ce condition. When
VCC falls out of tolerance, the SRAM
is unconditionally write-protected to
prevent inadvertent write operation.
At t his tim e t he integr a l ener gy
➤ Conventional SRAM operation;
The bq4014 requires no external cir-
cuitr y and is compatible with the
in d u s t r y-s t a n da r d 2Mb SRAM
pinout.
unlimited write cycles
➤ 10-year minimum data retention
in absence of power
➤ Battery internally isolated until
power is applied
Pin Names
Block Diagram
Pin Connections
A0–A17
Address inputs
DQ0–DQ7 Data input/output
CE
Chip enable input
Output enable input
Write enable input
No connect
OE
WE
NC
VCC
VSS
+5 volt supply input
Ground
Selection Guide
Maximum
Access
Negative
Supply
Maximum
Access
Negative
Supply
Part
Part
Number
Time (ns)
Tolerance
Number
Time (ns)
Tolerance
bq4014 -85
bq4014Y -85
bq4014Y -120
85
-5%
-5%
85
-10%
-10%
bq4014 -120
120
120
Sept. 1992
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