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BQ4015MA-120 PDF预览

BQ4015MA-120

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路静态存储器
页数 文件大小 规格书
13页 518K
描述
512Kx8 Nonvolatile SRAM

BQ4015MA-120 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.87
最长访问时间:120 ns其他特性:DATA RETENTION PERIOD = 10 YEARS; POWER SUPPLY WRITE PROTECTION
JESD-30 代码:R-XDMA-T32JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端口数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
可输出:YES封装主体材料:UNSPECIFIED
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
最大待机电流:0.001 A子类别:SRAMs
最大压摆率:0.115 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

BQ4015MA-120 数据手册

 浏览型号BQ4015MA-120的Datasheet PDF文件第2页浏览型号BQ4015MA-120的Datasheet PDF文件第3页浏览型号BQ4015MA-120的Datasheet PDF文件第4页浏览型号BQ4015MA-120的Datasheet PDF文件第5页浏览型号BQ4015MA-120的Datasheet PDF文件第6页浏览型号BQ4015MA-120的Datasheet PDF文件第7页 
bq4015/Y  
512Kx8 Nonvolatile SRAM  
is unconditionally write-protected to  
prevent an inadvertent write opera-  
tion.  
- Snap-on power-source for  
Features  
lithium battery backup  
Data retention for at least 10  
years without power  
- Replaceable power-source  
At this time the integral energy  
source is switched on to sustain the  
memory until after VCC returns  
valid.  
(part number: bq40MS)  
Automatic write-protection during  
power-up/power-down cycles  
General Description  
Conventional SRAM operation,  
including unlimited write cycles  
The bq4015/Y uses extremely low  
standby current CMOS SRAMs, cou-  
pled with small lithium coin cells to  
provide nonvolatility without long  
write-cycle times and the write-cycle  
limitations associated with EE-  
PROM.  
The CMOS bq4015/Y is a nonvola-  
tile 4,194,304-bit static RAM organ-  
ized as 524,288 words by 8 bits. The  
integral control circuitry and lith-  
ium energy source provide reliable  
nonvolatility coupled with the un-  
limited write cycles of standard  
SRAM.  
Internal isolation of battery be-  
fore power application  
Industry standard 32-pin DIP  
pinout  
34-pin LIFETIME LITHIUM™  
The bq4015/Y requires no external  
circuitry and is compatible with the  
industry-standard 4Mb SRAM pin-  
out.  
module  
The control circuitry constantly  
monitors the single 5V supply for an  
out-of-tolerance condition. When  
VCC falls out of tolerance, the SRAM  
- Module completely  
surface-mounted  
Pin Connections  
Pin Names  
A0–A18  
Address inputs  
DQ0–DQ7 Data input/output  
A
32  
1
V
CC  
18  
A
A
31  
30  
2
3
4
A
A
WE  
16  
14  
15  
17  
NC  
A15  
A16  
A18  
1
2
34  
CE  
Chip enable input  
Output enable input  
Write enable input  
No connect  
33 A17  
A
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
12  
3
32 A14  
31 A13  
30 A12  
29 A11  
28 A10  
27 A9  
5
A
A
A
A
A
A
A
13  
NC  
4
7
6
5
4
3
2
VCC  
WE  
OE  
5
OE  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
A
A
9
A
OE  
A
CE  
DQ  
DQ  
DQ  
DQ  
DQ  
8
6
7
8
CE  
11  
WE  
NC  
VCC  
VSS  
DQ7  
A8  
25 A7  
9
26  
DQ6  
DQ5  
DQ4  
DQ3  
DQ2  
DQ1  
DQ0  
VSS  
10  
11  
12  
24  
23  
22  
21  
20  
19  
A6  
A5  
A4  
A3  
A2  
A1  
10  
A
1
0
0
1
2
13  
14  
15  
16  
17  
A
DQ  
DQ  
DQ  
7
6
5
4
3
Supply voltage input  
Ground  
18 A0  
V
SS  
34-Pin LIFETIME LITHIUM Module  
PN4015Yncm.eps  
32-Pin DIP Module  
PN401501.eps  
Selection Guide  
Maximum  
Access  
Time (ns)  
Negative  
Supply  
Tolerance  
Maximum  
Negative  
Supply  
Tolerance  
Part  
Number  
Part  
Number  
Access  
Time (ns)  
bq4015x -70  
bq4015x -85  
70  
85  
-5%  
-5%  
bq4015Yx -70  
bq4015Yx -85  
70  
85  
-10%  
-10%  
Note: x = MA for PDIP or MS for LIFETIME LITHIUM module.  
5/99 E  
1

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