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BQ4013_14 PDF预览

BQ4013_14

更新时间: 2024-12-02 02:58:39
品牌 Logo 应用领域
德州仪器 - TI 静态存储器
页数 文件大小 规格书
14页 472K
描述
128 k ´ 8 NONVOLATILE SRAM (5 V, 3.3 V)

BQ4013_14 数据手册

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bq4013/Y  
128Kx8 Nonvolatile SRAM  
The bq4013/Y uses an extremely  
Features  
General Description  
low standby current CMOS SRAM,  
coupled with a small lithium coin  
cell to provide nonvolatility without  
long write-cycle times and the  
write-cycle limitations associated  
with EEPROM.  
Data retention for at least 10  
The CMOS bq4013/Y is a nonvolatile  
1,048,576-bit static RAM organized as  
131,072 words by 8 bits. The integral  
control circuitry and lithium energy  
source provide reliable nonvolatility  
coupled with the unlimited write cy-  
cles of standard SRAM.  
years without power  
Automatic write-protection during  
power-up/power-down cycles  
Conventional SRAM operation,  
The bq4013/Y requires no external  
circuitry and is socket-compatible  
with industry-standard SRAMs and  
most EPROMs and EEPROMs.  
including unlimited write cycles  
The control circuitry constantly  
monitors the single 5V supply for an  
out-of-tolerance condition. When  
Internal isolation of battery be-  
fore power application  
Industry standard 32-pin DIP  
V
CC falls out of tolerance, the SRAM  
pinout  
is unconditionally write-protected to  
prevent inadvertent write operation.  
At this time the integral energy  
source is switched on to sustain the  
memory until after VCC returns valid.  
Pin Connections  
Pin Names  
A0–A16  
Address inputs  
WE  
NC  
Write enable input  
No connect  
DQ0–DQ7 Data input/output  
CE  
OE  
Chip enable input  
VCC  
VSS  
Supply voltage input  
Ground  
Output enable input  
Selection Guide  
Maximum  
Negative  
Supply  
Tolerance  
Maximum  
Negative  
Supply  
Tolerance  
Part  
Number  
Access  
Part  
Number  
Access  
Time (ns)  
Time (ns)  
bq4013YMA -70  
bq4013YMA -85  
bq4013YMA-120  
70  
85  
-10%  
-10%  
-10%  
bq4013MA -85  
bq4013MA-120  
85  
-5%  
-5%  
120  
120  
9/96 D  
1

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