Datasheet > BQ4013YMA-8

BQ4013YMA-8

更新时间： 2024-11-30 22:09:23

品牌	Logo	应用领域
德州仪器 - TI		静态存储器
页数	文件大小	规格书
14页	472K
描述
128Kx8 Nonvolatile SRAM

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中文翻译

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数据手册

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BQ4013YMA-8 数据手册

bq4013/Y

128Kx8 Nonvolatile SRAM

The bq4013/Y uses an extremely

Features

General Description

low standby current CMOS SRAM,

coupled with a small lithium coin

cell to provide nonvolatility without

long write-cycle times and the

write-cycle limitations associated

with EEPROM.

➤ Data retention for at least 10

The CMOS bq4013/Y is a nonvolatile

1,048,576-bit static RAM organized as

131,072 words by 8 bits. The integral

control circuitry and lithium energy

source provide reliable nonvolatility

coupled with the unlimited write cy-

cles of standard SRAM.

years without power

➤ Automatic write-protection during

power-up/power-down cycles

➤ Conventional SRAM operation,

The bq4013/Y requires no external

circuitry and is socket-compatible

with industry-standard SRAMs and

most EPROMs and EEPROMs.

including unlimited write cycles

The control circuitry constantly

monitors the single 5V supply for an

out-of-tolerance condition. When

➤ Internal isolation of battery be-

fore power application

➤ Industry standard 32-pin DIP

_CCfalls out of tolerance, the SRAM

pinout

is unconditionally write-protected to

prevent inadvertent write operation.

At this time the integral energy

source is switched on to sustain the

memory until after V_CCreturns valid.

Pin Connections

Pin Names

A₀–A₁₆

Address inputs

Write enable input

No connect

DQ₀–DQ₇Data input/output

Chip enable input

V_CC

V_SS

Supply voltage input

Ground

Output enable input

Selection Guide

Maximum

Negative

Supply

Tolerance

Maximum

Negative

Supply

Tolerance

Part

Number

Access

Part

Number

Access

Time (ns)

bq4013YMA -70

bq4013YMA -85

bq4013YMA-120

-10%

bq4013MA -85

bq4013MA-120

-5%

120

9/96 D

12 3 4 5 6 7...14

中文翻译

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BQ4014Y	TI	获取价格	256Kx8 Nonvolatile SRAM
BQ4014YMA-120	TI	获取价格	256KX8 NON-VOLATILE SRAM MODULE, 120ns, DMA32, MODULE, DIP-32