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BLY91A PDF预览

BLY91A

更新时间: 2024-11-05 21:55:39
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
1页 17K
描述
NPN SILICON POWER TRANSISTOR

BLY91A 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63外壳连接:EMITTER
最大集电极电流 (IC):0.75 A基于收集器的最大容量:15 pF
集电极-发射极最大电压:36 V配置:Single
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):17 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):500 MHzBase Number Matches:1

BLY91A 数据手册

  
BLY91A  
NPN SILICON POWER TRANSISTOR  
PACKAGE STYLE SOT- 48 TYPE  
DESCRIPTION:  
The ASI BLY91A is Designed for  
28 V Class A, B and C Transmitter  
Applications.  
MAXIMUM RATINGS  
750 mA  
IC  
2.25 A (PEAK) f = 1.0 MHz  
36 V  
VCE  
VCB  
PDISS  
TJ  
65 V  
17.5 W @ Tmb = 25 OC  
-30 OC to +200 OC  
-30 OC to +200 OC  
9.4 OC/W  
TSTG  
θJC  
ALL DIMENSIONS IN INCHES  
1 = COLLECTOR  
2 & 4 = EMITTER  
3 = BASE  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 1.0 mA  
IE = 1.0 mA  
VCE = 28 V  
VCE = 5.0 V  
36  
V
BVCBO  
BVEBO  
ICEO  
65  
V
4.0  
V
5.0  
15  
mA  
---  
hFE  
IC = 500 mA  
5.0  
Cob  
ft  
VCB = 30 V  
VCE = 20V  
f = 1.0 MHz  
f = 500 MHz  
10  
pF  
IC = 400 mA  
500  
MHz  
GP  
12  
dB  
VCC = 28 V  
IC = 0.4 A  
f = 175 MHz  
8.0  
65  
PL  
η
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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