Datasheet > BLY92C_07

BLY92C_07

更新时间： 2025-08-19 12:20:27

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	37K
描述
NPN SILICON RF POWER TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLY92C_07 数据手册

BLY92C

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI BLY92C is designed for

Class C FM amplifier applications up to

250 MHz.

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

• P_G= 11 dB typical at 175 MHz

• High VSWR capability

• Omnigold™ Metalization System

ØC

MAXIMUM RATINGS

4.0 A

65 V

I_C

#8-32 UNC-2A

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

35 V

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

4.0 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

40 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

4.4 °C/W

T_STG

θ_JC

1 = Collector

2&3 = Emitter

4 = Base

CHARACTERISTICS T_C= 25°C

SYMBOL

BV_CES

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_E= 10 mA

BV_CEO

BV_EBO

I_CBO

4.0

_CB= 30 V

_CE= 5.0 V

2.0

---

I_C= 200 mA

P_OUT= 15 W

100

h_FE

V_CB= 30 V

f = 1.0 MHz

f = 175 MHz

C_ob

P_G

V_CC= 28 V

P_IN= 1.0 W

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

中文翻译

下载PDF

与BLY92C_07相关器件

型号	品牌	获取价格	描述	数据表
BLY93A	NJSEMI	获取价格	V.H.F POWER TRANSISTOR
BLY93A	PHILIPS	获取价格	Transistor,
BLY93C	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLY93C_07	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLY93H	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLY93H	NJSEMI	获取价格	V.H.F POWER TRANSISTOR
BLY94	NJSEMI	获取价格	V.H.P POWER TRANSISTOR
BM	MSYSTEM	获取价格	POT TRANSMITTER
BM	DONGYA	获取价格	简介: BM系列设备用断路器适用于额定电流0.5A至40A，交流50/60Hz，额定电压A
BM-07257MD	YSTONE	获取价格	LED DOT MATRIX DISPLAY