Datasheet > BLS9G2729L-350U

BLS9G2729L-350U

更新时间： 2024-09-15 22:07:47

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描述
RF MOSFET LDMOS 28V SOT502A

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BLS9G2729L-350U 数据手册

BLS9G2729L-350:

BLS9G2729LS-350

LDMOS S-band radar power transistor

Rev. 1 — 13 April 2017

Product data sheet

1. Product profile

1.1 General description

350 W LDMOS power transistor for S-band applications in the frequency range from

2.7 GHz to 2.9 GHz.

Table 1.

Test information

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 400 mA; in a class-AB demo

circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(GHz)

(W)

320

(dB)

(%)

pulsed RF

2.7 to 2.9

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for S-band operations

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz

12 3 4 5 6 7...13

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