Datasheet > BLS9G3135L-115

BLS9G3135L-115

更新时间： 2024-11-19 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1168K
描述
LDMOS S-band radar power transistor

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BLS9G3135L-115 数据手册

BLS9G3135L-115;

BLS9G3135LS-115

LDMOS S-band radar power transistor

Rev. 1 — 25 July 2019

Product data sheet

1. Product profile

1.1 General description

115 W LDMOS power transistor for S-band radar applications in the frequency range from

3.1 GHz to 3.5 GHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 200 mA; in a class-AB demo

circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(GHz)

(W)

115

(dB)

(%)

pulsed RF

3.1 to 3.5

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for broadband matching in 3.1 GHz to 3.5 GHz S-band operation

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 S-band radar applications in the frequency range 3.1 GHz to 3.5 GHz

12 3 4 5 6 7...13

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