Datasheet > BLS9G3135L-400U

BLS9G3135L-400U

更新时间： 2024-09-15 22:07:47

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描述
RF MOSFET LDMOS 32V SOT502A

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BLS9G3135L-400U 数据手册

BLS9G3135L-400;

BLS9G3135LS-400

LDMOS S-band radar power transistor

Rev. 1 — 6 April 2017

Product data sheet

1. Product profile

1.1 General description

400 W LDMOS power transistor for S-band radar applications in the frequency range from

3.1 GHz to 3.5 GHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 400 mA; in a class-AB demo

circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(GHz)

(W)

425

(dB)

(%)

pulsed RF

3.1 to 3.5

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for S-band operation

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 S-band radar applications in the frequency range 3.1 GHz to 3.5 GHz

12 3 4 5 6 7...13

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