Datasheet > BLS9G2934L-400

BLS9G2934L-400

更新时间： 2024-09-14 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1365K
描述
LDMOS S-band radar power transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLS9G2934L-400 数据手册

BLS9G2934L-400;

BLS9G2934LS-400

LDMOS S-band radar power transistor

Rev. 1 — 6 April 2017

Product data sheet

1. Product profile

1.1 General description

Single ended 400 W LDMOS power transistor for S-band radar applications in the

frequency range from 2.9 GHz to 3.4 GHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 400 mA; in a class-AB demo

test circuit.

Test signal

V_DS

(V)

P_L(1dB)

(W)

G_p

_D

(GHz)

(dB)

(%)

pulsed RF

2.9 to 3.4

400

1.2 Features and benefits

 Single ended

 Small size

 High efficiency

 Excellent ruggedness

 Designed for S-band operation

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 S-band radar applications in the frequency range 2.9 GHz to 3.4 GHz

12 3 4 5 6 7...13

中文翻译

下载PDF

与BLS9G2934L-400相关器件

型号	品牌	获取价格	描述	数据表
BLS9G2934L-400U	ETC	获取价格	RF MOSFET LDMOS 32V SOT502A
BLS9G2934LS-400	AMPLEON	获取价格	LDMOS S-band radar power transistor
BLS9G2934LS-400U	ETC	获取价格	RF MOSFET LDMOS 32V SOT502B
BLS9G3135L-115	AMPLEON	获取价格	LDMOS S-band radar power transistor
BLS9G3135L-400	AMPLEON	获取价格	LDMOS S-band radar power transistor
BLS9G3135L-400U	ETC	获取价格	RF MOSFET LDMOS 32V SOT502A
BLS9G3135LS-115	AMPLEON	获取价格	LDMOS S-band radar power transistor
BLS9G3135LS-400	AMPLEON	获取价格	LDMOS S-band radar power transistor
BLS9G3135LS-400U	ETC	获取价格	RF MOSFET LDMOS 32V SOT502B
BLSC1-10.000MHZ-G	CALIBER	获取价格	Series - Fundamental Quartz Crystal, 10MHz Nom, HC49/US, 2 PIN