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BLL1214-250R PDF预览

BLL1214-250R

更新时间: 2024-09-08 06:42:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管雷达
页数 文件大小 规格书
12页 134K
描述
LDMOS L-band radar power transistor

BLL1214-250R 数据手册

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BLL1214-250R  
LDMOS L-band radar power transistor  
Rev. 01 — 4 February 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead  
flange package (SOT502A) with a ceramic cap. The common source is connected to the  
flange.  
Table 1.  
Test information  
Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test  
circuit.  
Mode of operation  
f
VDS IDq  
(V) (mA) (W) (dB) (%) (dB)  
150 250 13 47 0.2  
PL  
Gp  
ηD  
Pdroop(pulse)  
tr  
tf  
(GHz)  
(ns)  
15  
(ns)  
5
pulsed RF  
1.2 to 1.4 36  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage  
of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %:  
‹ Output power = 250 W  
‹ Power gain = 13 dB  
‹ Efficiency = 47 %  
„ High power gain  
„ Easy power control  
„ Excellent ruggedness  
„ Source on mounting base eliminates DC isolators, reducing common mode  
inductance.  
1.3 Applications  
„ L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range  

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