Datasheet > BLF1043,112

BLF1043,112

更新时间： 2024-10-01 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
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描述
RF FET LDMOS 65V 18.5DB SOT538A

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BLF1043,112 数据手册

BLF1043

UHF power LDMOS transistor

Rev. 9 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

10 W LDMOS power transistor for base station applications at frequencies from HF to

1000 MHz.

Table 1.

Typical performance

RF performance at T_h= 25 C in a common source test circuit.

Mode of operation

V_DSI_DQ

P_L

G_p

(dB)

_D

(%)

d_im

(dBc)

-31

(MHz)

(V) (mA) (W)

CW, 2-tone, class-AB f₁= 960; f₂= 960.1 26

CW, 1-tone, class-AB f = 960 26

10 (PEP) 18.5

18.5

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical 2-tone performance at a supply voltage of 26 V and I_DQof 85 mA

 Output power = 10 W (PEP)

 Gain = 18.5 dB

 Efficiency = 40%

 d_im= -31 dBc

 Easy power control

 Excellent ruggedness

 High power gain

 Excellent thermal stability

 Designed for broadband operation (HF to 1000 MHz)

 No internal matching for broadband operation

 SMD package.

1.3 Applications

 RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier

applications in the 800 to 1000 MHz frequency range

 Broadcast drivers.

12 3 4 5 6 7...12

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