Datasheet > BLF10H6600PU

BLF10H6600PU

更新时间： 2024-11-20 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
18页	1512K
描述
RF FET LDMOS 110V 20.8DB SOT539A

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BLF10H6600PU 数据手册

BLF10H6600P; BLF10H6600PS

Power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 600 W LDMOS RF power transistor for transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

Table 1.

Application information

Test signal

P_L(AV)

(W)

P_L(M)

(W)

G_p

_D

IMD3

(MHz)

(dB)

(%) (dBc)

RF performance in a common source 860 MHz narrowband test circuit

2-tone, class-AB

pulsed, class-AB

f₁= 860; f₂= 860.1

860

250

20.8

19.8

32

600

1.2 Features and benefits

 Excellent ruggedness (VSWR  40 : 1 through all phases)

 Optimum thermal behavior and reliability, R_th(j-c)= 0.15 K/W

 High power gain

 High efficiency

 Designed for broadband operation (400 MHz to 1000 MHz)

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Communication transmitter applications

 Industrial applications

12 3 4 5 6 7...18

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