Datasheet > BLF10M6LS200U

BLF10M6LS200U

更新时间： 2024-11-20 22:07:43

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其他 - ETC		/
页数	文件大小	规格书
12页	1033K
描述
RF FET LDMOS 65V 20DB SOT502B

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BLF10M6LS200U 数据手册

BLF10M6200; BLF10M6LS200

Power LDMOS transistor

Rev. 2 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to

1000 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

39^[1]

(MHz)

(dB)

(%)

28.5

2-carrier W-CDMA

869 to 894

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz.

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (700 MHz to 1000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

 RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency

range.

12 3 4 5 6 7...12

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