Datasheet > BLF13H9L750P

BLF13H9L750P

更新时间： 2024-11-18 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1309K
描述
Power LDMOS transistor

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BLF13H9L750P 数据手册

BLF13H9L750P;

BLF13H9LS750P

Power LDMOS transistor

Rev. 1 — 20 September 2018

Product data sheet

1. Product profile

1.1 General description

750 W LDMOS power transistor in SOT539 push pull package for accelerator applications

at a frequency of 1.3 GHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 °C; t_p= 300 μs; δ = 10 %; I_Dq= 200 mA; in a class-AB demo

circuit.

Test signal

V_DS

(V)

P_L

G_p

η_D

(GHz)

1.3

(W)

750

700

(dB)

(%)

pulsed RF

62.5

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Accelerator applications at the frequency of 1.3 GHz

12 3 4 5 6 7...13

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