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BLF13H9L750P PDF预览

BLF13H9L750P

更新时间: 2024-09-14 17:14:59
品牌 Logo 应用领域
安谱隆 - AMPLEON /
页数 文件大小 规格书
13页 1309K
描述
Power LDMOS transistor

BLF13H9L750P 数据手册

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BLF13H9L750P;  
BLF13H9LS750P  
Power LDMOS transistor  
Rev. 1 — 20 September 2018  
Product data sheet  
1. Product profile  
1.1 General description  
750 W LDMOS power transistor in SOT539 push pull package for accelerator applications  
at a frequency of 1.3 GHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 200 mA; in a class-AB demo  
circuit.  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
ηD  
(GHz)  
1.3  
1.3  
(W)  
750  
700  
(dB)  
19  
(%)  
62  
pulsed RF  
CW  
50  
17  
62.5  
1.2 Features and benefits  
High efficiency  
Excellent ruggedness  
Excellent thermal stability  
Easy power control  
Integrated dual sided ESD protection enables excellent off-state isolation  
High flexibility with respect to pulse formats  
Internally matched for ease of use  
For RoHS compliance see the product details on the Ampleon website  
1.3 Applications  
Accelerator applications at the frequency of 1.3 GHz  

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