Datasheet > BLF0910H9LS600J

BLF0910H9LS600J

更新时间： 2024-10-01 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	1120K
描述
BLF0910H9LS600/SOT502/REEL

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BLF0910H9LS600J 数据手册

BLF0910H9LS600

Power LDMOS transistor

Rev. 2 — 22 June 2018

Product data sheet

1. Product profile

1.1 General description

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in

a high performance ceramic package.

Table 1.

Typical performance

RF performance at V_DS= 50 V; I_Dq= 90 mA in a class-AB application circuit.

Test signal

V_DS

(V)

P_L

G_p

η_D

(MHz)

915

(W)

600

(dB)

19.8

(%)

68.5

1.2 Features and benefits

 High efficiency

 Easy power control

 Excellent ruggedness

 Integrated ESD protection

 Designed for broadband operation (900 MHz to 930 MHz)

 Internally input matched

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Industrial applications in the 915 MHz ISM band

12 3 4 5 6 7...11

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