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BLC10G18XS-400AVTZ PDF预览

BLC10G18XS-400AVTZ

更新时间: 2024-11-23 22:07:43
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其他 - ETC /
页数 文件大小 规格书
16页 1747K
描述
BLC10G18XS-400AVT/SOT1258/TRAY

BLC10G18XS-400AVTZ 数据手册

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BLC10G18XS-400AVT  
Power LDMOS transistor  
Rev. 1 — 19 April 2018  
Product data sheet  
1. Product profile  
1.1 General description  
400 W LDMOS packaged asymmetric Doherty power transistor for base station  
applications at frequencies from 1805 MHz to 1880 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and  
production circuit (VDS = 28 V); IDq = 860 mA (main); VGS(amp)peak = 0.7 V, unless otherwise  
specified.  
Test signal  
f
VDS  
(V)  
28  
PL(AV)  
(W)  
56  
Gp  
D  
ACPR  
(MHz)  
(dB)  
16.5  
17.0  
(%)  
49.0  
49.5  
(dBc)  
1-carrier W-CDMA  
1805 to 1880  
1805 to 1880  
29.7 [1]  
29.5 [1]  
32  
93  
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on  
CCDF.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low thermal resistance providing excellent thermal stability  
Lower output capacitance for improved performance in Doherty applications  
Designed for low memory effects providing excellent digital pre-distortion capability  
Internally matched for ease of use  
Integrated ESD protection  
For RoHS compliance see the product details on the Ampleon website  
1.3 Applications  
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to  
1880 MHz frequency range  

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