Datasheet > BLC10G19XS-551AV

BLC10G19XS-551AV

更新时间： 2024-09-24 17:15:27

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
14页	1274K
描述
Power LDMOS transistor

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BLC10G19XS-551AV 数据手册

BLC10G19XS-551AV

Power LDMOS transistor

Rev. 1 — 6 March 2020

Product data sheet

1. Product profile

1.1 General description

550 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 1930 MHz to 2000 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo circuit. V_DS= 30 V;

_Dq= 370 mA (main); V_GS(amp)peak= 0.85 V, unless otherwise specified.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(dBm)

G_p

_D

ACPR

(dBc)

31 ^[1]

(MHz)

(dB)

(%)

50.5

1-carrier W-CDMA

1930 to 2000

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1930 MHz to

2000 MHz frequency range

12 3 4 5 6 7...14

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