Datasheet > BLC10M6XS200Y

BLC10M6XS200Y

更新时间： 2024-01-23 08:35:27

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描述
BLC10M6XS200/SOT1270/REELDP

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BLC10M6XS200Y 数据手册

BLC10M6XS200

Power LDMOS transistor

Rev. 1 — 5 December 2016

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz

to 450 MHz.

The BLC10M6XS200 is designed for high-power CW applications and is assembled in a

high performance plastic package.

Table 1.

Typical performance

RF performance at V_DS= 28 V; I_Dq= 350 mA; T_case= 25 C in a class-AB application circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

440

(W)

200

(dB)

(%)

1.2 Features and benefits

 High efficiency

 Easy power control

 Excellent ruggedness

 Excellent thermal resistance due to copper flange

 Integrated ESD protection

 Designed for broadband operation (425 MHz to 450 MHz)

 Internally input matched

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF lighting applications in the 425 MHz to 450 MHz ISM band

12 3 4 5 6 7...10

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