Datasheet > BLC10G27LS-320AVT

BLC10G27LS-320AVT

更新时间： 2024-11-19 17:15:19

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1439K
描述
Power LDMOS transistor

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BLC10G27LS-320AVT

Power LDMOS transistor

Rev. 2 — 1 December 2017

Product data sheet

1. Product profile

1.1 General description

320 W LDMOS packaged asymmetrical Doherty power transistor for base station

applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in the Doherty demo board.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

30 ^[1]

(MHz)

(dB)

(%)

1-carrier W-CDMA

2500 to 2700

[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Decoupling leads to enable improved video bandwidth

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifier for W-CDMA base stations and multi carrier applications in the

2500 MHz to 2700 MHz frequency range

12 3 4 5 6 7...13

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