Datasheet > BLC10G19XS-601AVT

BLC10G19XS-601AVT

更新时间： 2024-11-20 17:15:47

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
16页	1446K
描述
Power LDMOS transistor

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BLC10G19XS-601AVT

Power LDMOS transistor

Rev. 1 — 7 October 2021

Product data sheet

1. Product profile

1.1 General description

600 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 1930 MHz to 1995 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty production test circuit.

_DS= 30 V; I_Dq= 1060 mA (main); V_GS(amp)peak= 1.0 V, unless otherwise specified.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

34 ^[1]

(MHz)

(dB)

15.5

(%)

48.5

1-carrier W-CDMA

1930 to 1995

112

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects and minimum I_Dqdrift providing excellent digital

pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1930 MHz to

1995 MHz frequency range

12 3 4 5 6 7...16

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