Datasheet > BLC10G20LS-240PWTZ

BLC10G20LS-240PWTZ

更新时间： 2024-11-19 22:07:43

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描述
RF MOSFET LDMOS 28V SOT1275-3

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BLC10G20LS-240PWT

Power LDMOS transistor

Rev. 1 — 20 April 2017

Product data sheet

1. Product profile

1.1 General description

240 W LDMOS power transistor with enhanced video bandwidth for base station

applications at frequencies from 1805 MHz to 1995 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

I_Dq

V_DSP_L(AV)G_p

_D

(dB) (%) (dB) (dBc)

19.3 30 16

32 ^[1]

RL_inACPR_5M

(MHz)

(mA) (V)

(W)

2-carrier W-CDMA

1805 to 1880

1600 28

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;

5 MHz carrier spacing.

1.2 Features and benefits

 Excellent ruggedness

 Excellent video bandwidth enabling full band operation

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for low memory effects providing excellent pre-distortability

 Device can operate with the supply current delivered through the video leads

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the

1805 MHz to 1995 MHz frequency range

12 3 4 5 6 7...16

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