Datasheet > BLC10G22XS-570AVT

BLC10G22XS-570AVT

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
15页	1443K
描述
Power LDMOS transistor

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BLC10G22XS-570AVT

Power LDMOS transistor

Rev. 1 — 10 June 2021

Product data sheet

1. Product profile

1.1 General description

570 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 2110 MHz to 2180 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo test circuit. V_DS= 30 V;

_Dq= 1150 mA (main); V_GS(amp)peak= 1.1 V, unless otherwise specified.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

34.2 ^[1]

(MHz)

(dB)

16.2

(%)

48.0

1-carrier W-CDMA

2110 to 2180

93.3

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to

2180 MHz frequency range

12 3 4 5 6 7...15

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