Datasheet > BLA6G1011LS-200RG,

BLA6G1011LS-200RG,

更新时间： 2024-01-23 22:59:40

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描述
RF FET LDMOS 65V 20DB SOT502C

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BLA6G1011LS-200RG, 数据手册

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BLA6G1011-200R;

BLA6G1011L(S)-200RG

Power LDMOS transistor

Rev. 6 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to

1090 MHz.

Table 1.

Test information

Typical RF performance at T_case= 25 C.

Test signal

V_DS

(V)

P_L

G_p

_D

t_r

t_f

(MHz)

(W)

(dB)

(%)

(ns)

Typical RF performance in a class-AB production test circuit for SOT502A

pulsed RF 1030 to 1090 28 200 20 65

Typical RF performance in a Gullwing application for SOT502C and SOT502D

pulsed RF

1030 to 1090

200

1.2 Features and benefits

 Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply

voltage of 28 V and an I_Dqof 100 mA:

 Output power = 200 W

 Power gain = 20 dB

 Efficiency = 65 %

 Easy power control

 Integrated ESD protection

 Enhanced ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1030 MHz to 1090 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

12 3 4 5 6 7...13

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