Datasheet > BL4N1K5B

BL4N1K5B

更新时间： 2024-06-27 12:13:53

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	628K
描述
1500V, N Channel, HV Planar MOSFETs

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中文翻译

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数据手册

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BL4N1K5B 数据手册

N-Channel Enhancement Mode MOSFET

BL4N1K5 BL4N1K5B BL4N1K5F

Features



Fast switching

Low on-resistance

Low gate charge

Low reverse transfer capacitances

HBM: JESD22-A114-B: 1C

Mechanical Data



Case: TO-220AB, TO-263, ITO-220AB

TO-220AB TO-263 ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL4N1K5

BL4N1K5B

BL4N1K5F

TO-220AB

TO-263

50 pcs / Tube

4N1K5

50 pcs / Tube or 800 pcs / Tape & Reel

50 pcs / Tube

4N1K5B

4N1K5F

ITO-220AB

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_DSS

V_GSS

1500

±30

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p=10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*2

2.5

I_D

I_DM

E_AS

°C

Power Dissipation (TO-220AB, T_C= 25°C)

Power Dissipation (TO-263, T_C= 25°C)

Power Dissipation (ITO-220AB, T_C= 25°C)

Operating Junction Temperature Range

Storage Temperature Range

278

P_D

278

T_J

-55 ~ +150

T_STG

MTM0874A: April 2024 [2.2]

www.gmesemi.com

12 3 4 5 6

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