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BL4501V PDF预览

BL4501V

更新时间: 2024-04-09 19:02:31
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 425K
描述
45V,0.1A,General Purpose NPN Bipolar Transistor

BL4501V 数据手册

 浏览型号BL4501V的Datasheet PDF文件第1页浏览型号BL4501V的Datasheet PDF文件第3页浏览型号BL4501V的Datasheet PDF文件第4页 
Dual NPN Small Signal Surface Mount Transistor  
BL4501V  
Electrical Characteristics (@ TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IC = 10μA, IB = 0  
50  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC = 10mA, IB = 0  
45  
-
IE = 1μA, IC = 0  
6
-
V
VCB = 30V, IE = 0, TA = 25°C  
VCB = 30V, IE = 0, TA = 150°C  
VEB = 5V, IC = 0  
-
15  
nA  
μA  
nA  
mA  
-
Collector Cut-off Current  
ICBO  
-
5
Emitter-base Cut-off Current  
Collector-emitter Cut-off Current  
DC Current Gain  
IEBO  
ICEO  
hFE  
-
100  
1
VCE= 30V, IB = 0  
-
VCE = 5V, IC = 2mA  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5mA  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5mA  
VCE = 5V, IC= 2mA  
VCE = 5V, IC= 10mA  
200  
450  
0.20  
0.40  
0.90  
1.10  
0.70  
0.77  
-
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(sat)  
-
V
-
V
VBE(sat)  
-
0.58  
-
V
V
Base-Emitter Voltage  
Transition Frequency  
VBE(ON)  
V
VCE = 5V, IC= 10mA  
f = 100MHz  
fT  
100  
-
-
-
STM0735A: December 2022 [2.0]  
www.gmesemi.com  
2

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