型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLQC16N120 | BELLING |
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BLQC16N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semicond | |
BLQC40N120 | BELLING |
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BLQC40N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semicond | |
BLQC75N120 | BELLING |
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BLQC75N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semicond | |
BLQG3040A | BELLING |
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BLQG3040A采用先进的点火IGBT技术获得,可降低传导损耗,增强SCIS能力。内部集 | |
BLQG3040-D.B | BELLING |
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BLQG3040 is obtained by advanced ignition IGBTs technology which reduce the conduction los | |
BLQG50T65FCKA | BELLING |
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BLQG50T65FCKA is obtained by advanced Trench Field Stop (T-FS) technology which is charact | |
BLQG50T65FDLA | BELLING |
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BLQG50T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is charact | |
BLQM07N06 | BELLING |
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BLQM07N06,lv,低压、mos | |
BLQM08N06 | BELLING |
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BLQM08N06是一款60V 80A trench NMOS,采用先进的沟槽技术,具有低 | |
BLQM10P03 | BELLING |
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BLQM10P03 uses advanced trench technology and design to provide excellent RDS(ON) with low |