Datasheet > BGD812_01

BGD812_01

更新时间： 2022-10-17 03:30:40

品牌	Logo	应用领域
恩智浦 - NXP		放大器
页数	文件大小	规格书
12页	74K
描述
860 MHz, 18.5 dB gain power doubler amplifier

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BGD812_01 数据手册

Philips Semiconductors

Product speciﬁcation

860 MHz, 18.5 dB gain power doubler

ampliﬁer

BGD812

MLD351

MLD352

−50

−40

handbook, halfpage

(1)

(dBmV)

CTB

(dB)

mod

(dB)

(dBmV)

−60

−70

−80

−50

−60

−70

(2)

(3)

(4)

1000

f (MHz)

−90

−80

200

400

600

800

1000

200

400

600

800

f (MHz)

Z_S= Z_L= 75 Ω; V_B= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).

(1) V_o.

(3) Typ.

(1) V_o.

(3) Typ.

(2) Typ. +3 σ.

(4) Typ. −3 σ.

(2) Typ. +3 σ.

(4) Typ. −3 σ.

Fig.2 Composite triple beat as a function of

frequency under tilted conditions.

Fig.3 Cross modulation as a function of frequency

under tilted conditions.

MLD353

−50

handbook, halfpage

(1)

CSO

(dB)

(dBmV)

−60

(2)

−70

(3)

−80

(4)

−90

200

400

600

800

1000

f (MHz)

Z_S= Z_L= 75 Ω; V_B= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).

(1) V_o.

(3) Typ.

(2) Typ. +3 σ.

(4) Typ. −3 σ.

Fig.4 Composite second order distortion as a

function of frequency under tilted

conditions.

2001 Oct 30

1 2 3 456 7 8...12

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