Datasheet > BGD812_01

BGD812_01

更新时间： 2022-10-17 03:30:40

品牌	Logo	应用领域
恩智浦 - NXP		放大器
页数	文件大小	规格书
12页	74K
描述
860 MHz, 18.5 dB gain power doubler amplifier

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数据手册

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BGD812_01 数据手册

Philips Semiconductors

Product speciﬁcation

860 MHz, 18.5 dB gain power doubler

ampliﬁer

BGD812

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

CSO

composite second

order distortion

79 chs ﬂat; V_o= 44 dBmV; f_m= 548.5 MHz

112 chs ﬂat; V_o= 44 dBmV; f_m= 746.5 MHz

132 chs ﬂat; V_o= 44 dBmV; f_m= 860.5 MHz

−

−67

−60

−58

−57

−

112 chs; f_m= 210 MHz;

V_o= 50.2 dBmV at 745 MHz; note 2

79 chs; f_m= 210 MHz;

−

−64

V_o= 47.3 dBmV at 547 MHz; note 3

d₂

second order distortion note 4

−

−71

−

V_o

output voltage

d_im= −60 dB; note 5

dBmV

CTB compression = 1 dB; 132 chs ﬂat;

f = 859.25 MHz

−

CSO compression = 1 dB; 132 chs ﬂat;

f = 860.5 MHz

−

dBmV

noise ﬁgure

f = 50 MHz

f = 550 MHz

f = 750 MHz

f = 870 MHz

note 6

−

5.5

6.5

7.5

410

−

I_tot

total current

380

395

consumption (DC)

Notes

1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.

2. Tilt = 10.2 dB (55 to 745 MHz).

3. Tilt = 7.3 dB (55 to 547 MHz).

4. f_p= 55.25 MHz; V_p= 44 dBmV; f_q= 805.25 MHz; V_q= 44 dBmV; measured at f_p+ f_q= 860.5 MHz.

5. Measured according to DIN45004B: f_p= 851.25 MHz; V_p= V_o; f_q= 858.25 MHz; V_q= V_o−6 dB; f_r= 860.25 MHz;

V_r= V_o−6 dB; measured at f_p+ f_q− f_r= 849.25 MHz.

6. The module normally operates at V_B= 24 V, but is able to withstand supply transients up to 35 V.

2001 Oct 30

1 2 345 6 7...12

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