Datasheet > BGD812_01

BGD812_01

更新时间： 2022-10-17 03:30:40

品牌	Logo	应用领域
恩智浦 - NXP		放大器
页数	文件大小	规格书
12页	74K
描述
860 MHz, 18.5 dB gain power doubler amplifier

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BGD812_01 数据手册

Philips Semiconductors

Product speciﬁcation

860 MHz, 18.5 dB gain power doubler

ampliﬁer

BGD812

FEATURES

PINNING - SOT115J

• Excellent linearity

DESCRIPTION

• Extremely low noise

2, 3

input

• Excellent return loss properties

• Silicon nitride passivation

• Rugged construction

common

+V_B

7, 8

common

output

• Gold metallization ensures excellent reliability.

APPLICATIONS

handbook, halfpage

• CATV systems operating in the 40 to 870 MHz

frequency range.

DESCRIPTION

Side view

MSA319

Hybrid amplifier module in a SOT115J package operating

with a voltage supply of 24 V (DC).

Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL

G_p

PARAMETER

CONDITIONS

f = 45 MHz

MIN.

18.2

MAX.

UNIT

power gain

18.8

f = 870 MHz

V_B= 24 V

I_tot

total current consumption (DC)

380

410

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER

V_B

MIN.

MAX.

UNIT

supply voltage

−

V_i

RF input voltage

storage temperature

−

dBmV

°C

T_stg

T_mb

−40

−20

+100

operating mounting base temperature

°C

2001 Oct 30

123 4 5 6 7...12

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