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BFY193C(H) PDF预览

BFY193C(H)

更新时间: 2024-11-24 12:59:31
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英飞凌 - INFINEON 晶体半导体放大器晶体管射频微波
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BFY193C(H) 数据手册

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HiRel NPN Silicon RF Transistor  
BFY 193  
Features  
¥ HiRel Discrete and Microwave Semiconductor  
¥ For low noise, high gain broadband amplifiers up to  
2 GHz.  
¥ For linear broadband amplifiers  
¥ Hermetically sealed microwave package  
¥ fT = 8 GHz, F = 2.3 dB at 2 GHz  
¥
qualified  
Micro-X1  
¥ ESA/SCC Detail Spec. No.: 5611/006  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Type  
Marking  
Ordering Code  
Pin Configuration  
Package  
Micro-X1  
BFY 193 (ql)  
-
see below  
C
E
B
E
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1610  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code: on request  
Ordering Code: on request  
ES: ESA Space Quality, Ordering Code: Q62702F1701  
(see Chapter Order Instructions for ordering example)  
Table 1  
Maximum Ratings  
Parameter  
Symbol  
VCEO  
VCES  
VCBO  
VEBO  
IC  
Limit Values  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage, VBE = 0  
Collector-base voltage  
Emitter-base voltage  
Collector current  
12  
20  
V
20  
V
2
V
80  
10 1)  
mA  
mA  
mW  
°C  
°C  
°C  
Base current  
IB  
Total power dissipation, TS £ 104 °C 2)  
Junction temperature  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
Junction soldering point 2)  
1)  
Ptot  
580  
Tj  
200  
Top  
- 65 É + 200  
- 65 É + 200  
Tstg  
Rth JS  
< 165  
K/W  
The maximum permissible base current for VFBE measurements is 30 mA (spot measurement duration < 1 s).  
TS is measured on the collector lead at the soldering point to the pcb.  
2)  
Semiconductor Group  
1
Draft A03 1998-04-01  

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