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BFY193CSTR

更新时间： 2024-11-20 13:05:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体半导体放大器晶体管射频微波
页数	文件大小	规格书
5页	122K
描述
RF Small Signal Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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BFY193CSTR 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.65	Base Number Matches：	1

BFY193CSTR 数据手册

HiRel NPN Silicon RF Transistor

BFY 193

Features

¥ HiRel Discrete and Microwave Semiconductor

¥ For low noise, high gain broadband amplifiers up to

2 GHz.

¥ For linear broadband amplifiers

¥ Hermetically sealed microwave package

¥ f_T= 8 GHz, F = 2.3 dB at 2 GHz

qualified

Micro-X1

¥ ESA/SCC Detail Spec. No.: 5611/006

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type

Marking

Ordering Code

Pin Configuration

Package

Micro-X1

BFY 193 (ql)

see below

(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1610

H: High Rel Quality,

S: Space Quality,

Ordering Code: on request

ES: ESA Space Quality, Ordering Code: Q62702F1701

(see Chapter Order Instructions for ordering example)

Table 1

Maximum Ratings

Parameter

Symbol

V_CEO

V_CES

V_CBO

V_EBO

I_C

Limit Values

Unit

Collector-emitter voltage

Collector-emitter voltage, V_BE= 0

Collector-base voltage

Emitter-base voltage

Collector current

10 ¹⁾

°C

Base current

I_B

Total power dissipation, T_S£ 104 °C ²⁾

Junction temperature

Operating temperature range

Storage temperature range

Thermal Resistance

Junction soldering point ²⁾

P_tot

580

T_j

200

T_op

- 65 É + 200

T_stg

R_{th JS}

< 165

K/W

The maximum permissible base current for V_FBEmeasurements is 30 mA (spot measurement duration < 1 s).

T_Sis measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Draft A03 1998-04-01

12 3 4 5

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